Operation regimes and electrical transport of steep slope Schottky Si-FinFETs
نویسندگان
چکیده
In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated (TIG) Si-FinFETs with Schottkybarrier (SB) has proven to bring both functionalities even in a single device. However, the
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